Channel width effect on the operation of 4H-SiC vertical JFETs-Reference-Cited by-同舟云学术

Channel width effect on the operation of 4H-SiC vertical JFETs

Published:2016-11-15 Issue:4 Volume:214 Page:1600452
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Vamvoukakis K.¹,Stefanakis D.¹,Stavrinidis A.¹,Vassilevski K.²,Konstantinidis G.¹,Kayambaki M.¹,Zekentes K.¹³

Affiliation:

1. MRG-IESL/FORTH; Vassilika Vouton, PO Box 1385 Heraklion Greece

2. School of Electrical and Electronic Engineering; Newcastle University; Newcastle upon Tyne NE1 7RU UK

3. Université Grenoble Alpes; IMEP-LAHC; 38000 Grenoble France

Funder

General Secretariat for Research and Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2. SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

3. V. Veliaidis 2014 1 37 10.1002/047134608X.W8232

4. 1.88-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET

5. Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

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