Abstract
In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical parameters of MOSFET device as leakage current and breakdown voltage.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
6 articles.
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