Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer-Reference-Cited by-同舟云学术

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

Published:2018-06 Issue: Volume:924 Page:84-87
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Piluso Nicolò¹,Severino Andrea¹,Anzalone Ruggero¹,di Stefano Maria Ausilia¹,Fontana Enzo¹,Salanitri Marco¹,Lorenti Simona¹,Campione Alberto¹,Fiorenza Patrick²^ORCID,La Via Francesco²

Affiliation:

1. ST-Microelectronics

2. CNR-IMM

Abstract

In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical parameters of MOSFET device as leakage current and breakdown voltage.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.84.pdf

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