Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults

Published:2013-04-01 Issue:4S Volume:52 Page:04CP10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tanaka Atsushi,Nakayama Koji,Asano Katsunori,Miyazawa Tetsuya,Tsuchida Hidekazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

2. Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

3. Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

4. Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

5. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

2. Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation;IEEE Transactions on Electron Devices;2023-04

3. Limited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers;Applied Physics Express;2022-03-21

4. Simulation Analysis of Increase in ON-State Voltage of 4H-SiC Bipolar Devices Due to Single-Shockley-Stacking Faults;IEEE Transactions on Electron Devices;2021-07

5. Effects of stacking faults on electron transport in 4H-SiC n-type epilayers under unipolar operation evaluated by TCAD simulation;Japanese Journal of Applied Physics;2020-04-29

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3