Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089231
Reference21 articles.
1. 100 mm 4HN-SiC Wafers with Zero Micropipe Density
2. Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Localized electronic states around stacking faults in silicon carbide
5. Cathodoluminescence investigation of stacking faults extension in 4H-SiC
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3. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
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