High quality 4H-SiC homo-epitaxial wafer using the optimal C/Si ratio
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Mechanisms of growth and defect properties of epitaxial SiC
2. Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films
3. Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
4. Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC
5. VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
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1. High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor;Journal of Crystal Growth;2024-09
2. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29
3. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth;Journal of Crystal Growth;2023-09
4. The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers;Crystals;2023-06-10
5. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01
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