Affiliation:
1. Mitsubishi Electric Corporation
Abstract
External Schottky barrier diodes (SBDs) used as free-wheel diodes should be larger in higher voltage devices to avoid bipolar degradation consequent on current conduction of body diodes in SiC MOSFETs. By embedding an external SBD into an SiC MOSFET, we achieved compact 3.3 kV and 6.5 kV SiC MOSFETs that are free from bipolar degradation. The active area of the 3.3 kV/6.5 kV samples is only about a half/quarter of the total active area of a conventional MOSFET and a coupled external SBD.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. J.P. Bergman et al., Mater. Sci. Forum, 389-3, 9-14 (2002).
2. C.T. Yen et al., Proceedings of ISPSD'15, 265-268.
3. H. Jiang et al., Proceedings of ISPSD'17, 49-52.
4. S. Hino et al., Mater. Sci. Forum, 897, 477-482 (2017).
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