Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
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Published:2024-08-23
Issue:
Volume:360
Page:169-175
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Kawahara Koutarou1, Sugawara Katsutoshi1, Iijima Akifumi1, Hino Shiro1, Fujiyoshi Katsuhiro2, Oritsuki Yasunori2, Murakami Takeshi2, Takahashi Tetsuo2, Kagawa Yasuhiro2, Hironaka Yoichi2, Nishikawa Kazuyasu1
Affiliation:
1. Mitsubishi Electric Corporation 2. Mitsubishi Electric Co.
Abstract
We demonstrated that the surge current capability of 3.3 kV Schottky-barrier-diode-embedded (SBD-embedded) SiC MOSFETs is equivalent to that of conventional SiC MOSFETs and three times higher than that of SiC SBDs. Furthermore, we revealed that the bipolar degradation attributed to the repetitive surge stress of high current density was negligible, which can be explained by the small total area of the expanded stacking faults (SFs) caused by the limited total period of conduction of the body diodes.
Publisher
Trans Tech Publications, Ltd.
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