Recent Developments Accelerating SiC Adoption-Reference-Cited by-同舟云学术

Recent Developments Accelerating SiC Adoption

Published:2018-06 Issue: Volume:924 Page:793-798
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bhalla Anup¹

Affiliation:

1. United Silicon Carbide, Inc.

Abstract

The benefits of SiC devices for use in power electronics has been long understood, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point [1,15]. It takes the confluence of many separate developments to build the necessary momentum for accelerated adoption, and we will examine these factors.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.793.pdf

Reference15 articles.

1. P. Waver, in Bodo's Power Systems, pp.20-24, May (2017).

2. IHS Technology. SiC & GaN Power Semiconductor report (2016).

3. 6inch SiC Epitaxial Specifications, Show Denko K.K., September (2016).

4. D. Peters, et. al., ISPSD 2017, pp.239-242.

5. Panasonic at PCIM 2017, DioMOS 6-inch SiC.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

2. Advances in 200 mm 4H SiC Wafer Development and Production;Materials Science Forum;2022-05-31

3. Understanding the breakdown asymmetry of 4H-SiC power diodes with extended defects at locations along step-flow direction;Journal of Applied Physics;2020-10-28

4. Evolution of lattice distortions in 4H-SiC wafers with varying doping;Scientific Reports;2020-07-02

5. Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing;Crystals;2020-06-18