Design, Fabrication and Testing of 3.3 kV/200A SiC Half-bridge Power Module
Author:
Affiliation:
1. Stony Brook University,Electrical & Computer Engineering,Stony Brook,NY,USA
2. University of Arkansas,Electrical Engineering,Fayetteville,AR,USA
3. Hesse Mechatronics,Mineola,NY,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131664.pdf?arnumber=10131664
Reference5 articles.
1. A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer;huang;Graduate Theses and Dissertations,2018
2. A 3.3 kV SiC MOSFET Half-Bridge Power Module;mouawad;CIPS 2018 10th International Conference on Integrated Power Electronics Systems,0
3. Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength;bayer;CIPS 2016 9th International Conference on Integrated Power Electronics Systems CIPS,0
4. Recent Developments Accelerating SiC Adoption
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