Affiliation:
1. KTH, Royal Institute of Technology
2. University of Oslo
Abstract
The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction, the depth distribution of the incident ions is shown to be about 7 times deeper than for random implantations. At higher implantation temperatures, the channeling is reduced by the lattice vibrations and, for instance, at 600 °C implantation the distribution is about 3-4 times deeper than for a RT random implantation. The results are of technological interest for further development of implantation technology for 4H-SiC device manufacturing.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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