Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

Abstract

Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in the near-infrared wavelength was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.