Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

Author:

Stahlbush Robert E.1,Zhang Qing Chun Jon2,Agarwal Anant K.2,Mahadik Nadeemullah A.1

Affiliation:

1. U.S. Naval Research Laboratory

2. Cree, Inc.

Abstract

The effects of Shockley stacking faults (SSFs) that originate from half loop arrays (HLAs) on the forward voltage and reverse leakage were measured in 10 kV 4H-SiC PiN diodes. The presence of HLAs and basal plane dislocations in each diode in a wafer was determined by ultraviolet photoluminescence imaging of the wafer before device fabrication. The SSFs were expanded by electrical stressing under forward bias of 30 A/cm2, and contracted by annealing at 550 °C. The electrical stress increased both the forward voltage and reverse leakage. Annealing returned the forward voltage and reverse leakage to nearly their original behavior. The details of SSF expansion and contraction from a HLA and the effects on the electrical behavior of the PiN diodes are discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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