Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
Funder
Council for Science, Technology and Innovation
Program on Open Innovation Platform with Enterprises, Research Institute and Academia
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5143690
Reference31 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Fundamentals of Silicon Carbide Technology
3. Material science and device physics in SiC technology for high-voltage power devices
4. Status and prospects for SiC power MOSFETs
5. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter;Defect and Diffusion Forum;2024-08-22
2. Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation;Applied Physics Express;2024-08-01
3. Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate;Materials Science in Semiconductor Processing;2024-06
4. Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress;IEEE Transactions on Electron Devices;2024-05
5. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3