Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography-Reference-Cited by-同舟云学术

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Published:2014-02 Issue: Volume:778-780 Page:374-377
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yamashita Tamotsu¹,Matsuhata Hirofumi¹,Miyasaka Yoshihiko¹,Momose Kenji¹,Sato Takayuki¹,Kitabatake Makoto¹

Affiliation:

1. FUPET

Abstract

The trapezoid-shape defects are one of the most common surface defects on current 4H-SiC epitaxial film surface since they give rise negative impact for MOS-devices. We have investigated structures and origins of the defects. It is discovered that the possible origins of the trapezoid-shape defects are basal plane dislocations (BPDs), threading edge dislocations (TEDs), threading screw dislocations (TSDs),and the short dislocation loops introduced under scratches.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.374.pdf

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