Vanadium doping in 4H-SiC epitaxial growth for carrier lifetime control
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=11/a=111301/pdf
Reference22 articles.
1. 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
2. High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
5. Degradation of hexagonal silicon-carbide-based bipolar devices
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1. A Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiC;Materials Science Forum;2023-07-21
2. Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process;Journal of Electronic Materials;2023-04-27
3. Investigation on the photocurrent tailof vanadium-compensated 4H–SiC for microwave application;AIP Advances;2022-09-01
4. Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity;Journal of Applied Physics;2022-06-28
5. The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers;physica status solidi (b);2022-01-22
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