Affiliation:
1. National University of Defense Technology
Abstract
Extrinsic light excitation has much lower absorption coefficient compared to intrinsic light excitation, which can better utilize the “bulk” of semiconductor rather than a thin surface as the depth of light absorption is much larger, making it suitable for higher power applications. However, commercial technology computer aided design (TCAD) software has not developed a model for extrinsic light excitation. Therefore, we construct a model of Vanadium-compensated semi-insulating (VCSI) 6H-SiC photoconductive semiconductor switch (PCSS) illuminated with sub-bandgap light, and realize the process of light absorption at V deep acceptor level in Silvaco TCAD simulation by modifying the electron emission rate. Then, we simulate the transient response of 6H-SiC triggered by a nanosecond light pulse and discuss the feasibility of this method.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. Y. Goldberg, M. Levinshtein, S. Rumyantsev, Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe, SciTech Book News. 25 (2001) 93–146.
2. W. Nunnally, M. Mazzola, Opportunities for employing silicon carbide in high power photo-switches, in: Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472), 2003: pp.823-826 Vol.2. https://doi.org/.
3. Optoelectronic Microwave Power Amplifiers;O'Connell;IEEE Transactions on Dielectrics and Electrical Insulation
4. The Test of a High-Power, Semi-Insulating, Linear-Mode, Vertical 6H-SiC PCSS;Wu;IEEE Transactions on Electron Devices
5. Progress in narrowband high-power microwave sources;Zhang;Physics of Plasmas