Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity-Reference-Cited by-同舟云学术

Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

Published:2022-06-28 Issue:24 Volume:131 Page:245107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kojima Kazutoshi¹^ORCID,Sato Shin-ichiro²^ORCID,Ohshima Takeshi²^ORCID,Kuroki Shin-Ichiro³^ORCID

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

2. Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology, Takasaki, Gunma 370-1292, Japan

3. Research Institute for Nanodevice, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan

Abstract

4H-SiC epitaxial layers with ultrahigh resistivity of over 1010 Ω cm were successfully grown by using a hot wall chemical vapor deposition system with vanadium doping. The resistivity of the vanadium doped epilayer was found to be strongly dependent on the types of dopant impurities. The resistivity of n-type-based vanadium doped semi-insulating 4H-SiC epilayers showed stronger dependence on vanadium incorporation than that of p-type-based epilayers. This means that the carrier trap characteristics of vanadium atoms may differ with respect to electrons and holes. As the result, an ultrahigh resistivity of over 1010 Ω cm was realized on an n-type-based 4H-SiC epilayer with vanadium doping.

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0095457

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