Affiliation:
1. AIST - National Institute of Advanced Industrial Science and Technology
Abstract
A field-plate structure is applied to vertical diamond Schottky barrier diode. A sputtered Al2O3 with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
9 articles.
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