Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure<sub /> <sub />-Reference-Cited by-同舟云学术

Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure

Published:2022-11 Issue:11 Volume:43 Page:1937-1940
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Qi¹,Wang Juan¹^ORCID,Shao Guoqing¹^ORCID,Chen Genqiang¹,He Shi¹^ORCID,Zhang Qianwen¹,Zhang Shumiao¹,Wang Ruozheng¹,Fan Shuwei¹^ORCID,Wang Hong-Xing¹^ORCID

Affiliation:

1. Key Laboratory of Physical Electronics and Devices, School of Electronic Science and Engineering, Xi’an Jiaotong University, Ministry of Education, Xi’an, China

Funder

National Natural Science Foundation of China

Natural Science Basic Research Program of Shaanxi

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9927475/09905639.pdf?arnumber=9905639

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

2. Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact;Applied Physics Letters;2024-06-03

3. Vertical diamond Schottky barrier diodes with curved field plates;Applied Physics Letters;2024-06-03

4. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06

5. Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation;Electronics;2024-04-28