Switching characteristics of a diamond Schottky barrier diode
Author:
Affiliation:
1. Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering
2. Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/elex/7/17/7_17_1246/_pdf
Reference6 articles.
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3. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
4. [4] H. Umezawa, et al. “Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode,” IEEE Electron Device Lett, vol. 30, no. 9, pp. 960-962, 2009.
5. [5] K. Ikeda, et al., “Thermally stable Schottky barrier diode by Ru/diamond,” Appl. Phys. Express, vol. 2, no. 1, pp. 011202-1-011202-3, 2009.
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