690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

Abstract

The trench gate structure MOSFET, with its lack of JFET resistance, is one of the structures able to achieve low on-state resistance [1,2]. In 2008, this group succeeded in fabricating 790V SiC trench MOSFETs with the lowest Ron,sp (1.7 mΩcm2) at room temperature. However these devices had issues regarding oxide destruction at the trench bottom during high drain-source voltage application. In order to improve this problem, this group developed the double-trench MOSFET structure. This structure has both source trenches and gate trenches. This paper compares two kinds of trench MOSFETs: the conventional, single trench structure and a double-trench structure. Also, the latest characteristics are presented.