Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS-Reference-Cited by-同舟云学术

Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS

Published:2024-03 Issue:3 Volume:71 Page:1618-1625
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yi Bo¹^ORCID,Li Huan²,Zhang Bingke³^ORCID,Xu Yi¹,Shi Wenkun²,Xiang Yong⁴^ORCID,Zhou Rong²,Cheng Junji¹^ORCID,Huang Haimeng¹^ORCID,Kong Moufu¹^ORCID,Yang Hongqiang¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. China Zhenhua Group Yongguang Electronics Company Ltd., GuiYang, China

3. Beijing Institute of Smart Energy, Beijing, China

4. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, China

Funder

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10436057.pdf?arnumber=10436057

Reference38 articles.

1. A High-Temperature SiC Three-Phase AC–DC Converter Design for >$100 ^{\circ}$C Ambient Temperature

2. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

3. Wide bandgap (WBG) power devices and their impacts on power delivery systems

4. A SiC Trench MOSFET concept offering improved channel mobility and high reliability

5. The new CoolSiCTM trench MOSFET technology for low gate oxide stress and high performance;Peters

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