Effects of Roughness Scattering in Carrier Transport of Near Ballistic Silicon NanoWire MOSFET

Abstract

– In this paper, we have investigated the Scattering effects in Carrier Transport of Near-ballistic SiNW MOSFET, which incorporates elastic scattering, optical phonon emission and its combination with Roughness Scattering. Current–voltage (I–V) characteristics of Proposed model is compared with Natori’s Ballistic and Quasi-Ballistic Transport model. We study the impact of Surface Roughness in the device leads on the current variability of a Gate-All-Around (GAA) SiNW MOSFET, which shows a remarkable decrease in electric current, mobility variation and transconductance because of scattered mobility. Analog parameters like the transconductance (gm), the transconductance generation factor (gm/Id), the early voltage (VA) have also been investigated. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.