Influence of Temperature in Scattered SiNW MOSFET-Reference-Cited by-同舟云学术

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Influence of Temperature in Scattered SiNW MOSFET

Published:2017-07-05 Issue:1 Volume:89 Page:35-40
ISSN:0369-8203
Container-title:Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
language:en
Short-container-title:Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci.

Author:

Sheik Arafat I.,Balamurugan N. B.,Bismillah Khan S.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s40010-017-0385-2.pdf

Reference22 articles.

1. Sheik Arafat I, Balamurugan NB, Priya C (2014) Effects of roughness scattering in carrier transport of near ballistic silicon nanowire MOSFET. Appl Mech Mater 573:201–208

2. Natori K (2008) Compact modeling of ballistic nanowire MOSFETs. IEEE Trans Electron Dev 55:2877–2885

3. Martinez A, Seoane N, Brown A, Asenov A (2009) A comparison between a fully 3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET. In: Proceedings of SISPAD, San Jose, CA, pp 194–197

4. Zilli M, Esseni D, Palestri P, Selmi L (2007) On the apparent mobility in nanometric n-MOSFET. IEEE Electron Dev Lett 28:1036–1039

5. Pala MG, Buran C, Poli S, Mouis M (2009) Full quantum treatment of surface roughness effects in silicon nanowires and double gate. J Comput Electron 8:374–381

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