High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability-Reference-Cited by-同舟云学术

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High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability

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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Sung Dae Suk ,Sung-Young Lee ,Sung-Min Kim ,Eun-Jung Yoon ,Min-Sang Kim ,Ming Li ,Chang Woo Oh ,Kyoung Hwan Yeo ,Sung Hwan Kim ,Dong-Suk Shin ,Kwan-Heum Lee ,Heung Sik Park ,Jeong Nam Han ,Park C.J.,Jong-Bong Park ,Dong-Won Kim ,Donggun Park ,Byung-Il Ryu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609453.pdf?arnumber=1609453

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