Impurity-limited mobility and variability in gate-all-around silicon nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704174
Reference32 articles.
1. Multiple-gate SOI MOSFETs
2. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
3. Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET
4. Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
5. Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography
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