Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology-Reference-Cited by-同舟云学术

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

Published:2018-08 Issue: Volume:282 Page:94-98
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Abrenica Graniel Harne A.¹,Lebedev Mikhail V.²,Le Hy¹,Hajduk Andreas³,Fingerle Mathias³,Mayer Thomas³,de Gendt Stefan¹,van Dorp Dennis H.¹

Affiliation:

1. IMEC

2. A.F. Ioffe Physical Technical Institute RAS

3. Darmstadt University of Technology

Abstract

We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.282.94.pdf

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