Morphology and defect properties of the Ge–GeO2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3280385
Reference28 articles.
1. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
2. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
3. High-k/Ge MOSFETs for future nanoelectronics
4. Hydrogen in MOSFETs – A primary agent of reliability issues
5. Hydrogen effects in MOS devices
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