Boron-Related Defects in Low Temperature Irradiated Silicon-Reference-Cited by-同舟云学术

Boron-Related Defects in Low Temperature Irradiated Silicon

Published:2015-10 Issue: Volume:242 Page:285-289
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Khirunenko Ludmila¹,Sosnin Mikhail¹,Duvanskii Andrei¹,Abrosimov N.V.²,Riemann Helge³

Affiliation:

1. National Academy of Sciences of Ukraine

2. IPMS Fraunhofer

3. Leibniz Institute for Crystal Growth

Abstract

The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one another and with atoms of interstitial oxygen was revealed. For as-irradiated samples we observed the appearance of three LVMs at 739.4, 759.6, and 780.9 cm-1, which are attributed to BiBi complex, and the LVM at 923.5 cm-1, which are identified as BiOi complex.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.285.pdf

Reference14 articles.

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