Interstitial boron in silicon: A negative-Usystem
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.921/fulltext
Reference35 articles.
1. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
2. A new mechanism for interstistitial migration
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