Defects involving interstitial boron in low-temperature irradiated silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.235210/fulltext
Reference30 articles.
1. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
2. B diffusion and clustering in ion implanted Si: The role of B cluster precursors
3. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
4. Negative-U Properties for Point Defects in Silicon
5. Interstitial boron in silicon: A negative-Usystem
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