Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon-Reference-Cited by-同舟云学术

Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon

Published:2016-08-19 Issue:11 Volume:213 Page:2850-2854
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Murin L. I.¹,Lastovskii S. B.¹,Tolkacheva E. A.¹,Markevich V. P.²,Peaker A. R.²,Svensson B. G.³

Affiliation:

1. Scientific-Practical Materials Research Center of NAS of Belarus; 220072 Minsk Belarus

2. School of Electrical and Electronic Engineering; The University of Manchester; Manchester M13 9PL UK

3. Department of Physics; Oslo University; 0318 Oslo Norway

Funder

Belarusian Foundation for Basic Research

Engineering and Physical Sciences Research Council

Research Centre for Solar Cell Technology (FME − Solar United)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

2. Interstitial boron in silicon: A negative-Usystem

3. Interstitial Defect Reactions in Silicon

4. Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

5. Formation and origin of the dominating electron trap in irradiatedp-type silicon

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