Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1384855
Reference27 articles.
1. A detailed model to improve the radiation-resistance of Si space solar cells
2. Deep level analysis of radiation-induced defects in Si crystals and solar cells
3. Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation
4. Defects in electron‐irradiated, gallium‐doped silicon
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