The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes-Reference-Cited by-同舟云学术

The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

Published:2022-03 Issue:3 Volume:69 Page:576-586
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Liao C.^ORCID,Fretwurst E.,Garutti E.,Schwandt J.^ORCID,Moll M.^ORCID,Himmerlich A.^ORCID,Gurimskaya Y.^ORCID,Pintilie I.^ORCID,Nitescu A.^ORCID,Li Z.,Makarenko L.

Funder

European Unions Horizon 2020 Research and Innovation Program

Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through the Germany’s Excellence Strategy – EXC 2121 “Quantum Universe” –

Institutului de Fizică Atomică-European Organization for Nuclear Research-Romania (IFA-CERN-RO) 5/2019 Project

Universität Hamburg

Key Scientific and Technological Innovation Project of Shandong Province

Project of Yantai Insitute for the exchange of Driving Forces

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9734795/09698047.pdf?arnumber=9698047

Reference51 articles.

1. Intrinsic concentration, effective densities of states, and effective mass in silicon

2. On the nature of hydrogen-related centers in p-type irradiated silicon

3. The Three‐Dimensional Poole‐Frenkel Effect

4. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors

5. Interstitial Defect Reactions in Silicon

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