Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors-Reference-Cited by-同舟云学术

Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

Published:2023-03 Issue: Volume:1048 Page:167977
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Himmerlich Anja^ORCID,Castello-Mor Nuria,Rivera Esteban Currás,Gurimskaya Yana^ORCID,Maulerova-Subert Vendula,Moll Michael^ORCID,Pintilie Ioana^ORCID,Fretwurst Eckhart,Liao Chuan,Schwandt Jörn^ORCID

Funder

European Commission

Horizon 2020 Framework Programme

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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1. Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-04

2. Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35μm and 50μm thick silicon substrate;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-10