Deep level analysis of radiation-induced defects in Si crystals and solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370698
Reference15 articles.
1. Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
2. Numerical analysis for radiation‐resistant GaAs heteroface solar cell structures
3. Type conversion in irradiated silicon diodes
4. New Developments in Defect Studies in Semiconductors
5. Correlation of the concentration of the carbon‐associated radiation damage levels with the total carbon concentration in silicon
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