Correlation of the concentration of the carbon‐associated radiation damage levels with the total carbon concentration in silicon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Correlation of the concentration of the carbon‐associated radiation damage levels with the total carbon concentration in silicon

Published:1988-01 Issue:1 Volume:63 Page:183-189
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ferenczi G.,Londos C. A.,Pavelka T.,Somogyi M.,Mertens A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.340487

Reference19 articles.

1. Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment

2. Carbon enhancement effect on oxygen precipitation in Czochralski silicon

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15

2. Substitutional carbon-dioxygen center in irradiated silicon;Materials Science in Semiconductor Processing;2021-06

3. The Interstitial Carbon–Dioxygen Center in Irradiated Silicon;Crystals;2020-11-05

4. A DLTS Perspective on Electrically Active Defects in Plated Crystalline Silicon n+p Solar Cells;ECS Journal of Solid State Science and Technology;2019

5. Comparison of techniques for detecting metal contamination in silicon wafers;Spectrochimica Acta Part B: Atomic Spectroscopy;2018-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP