Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372156
Reference24 articles.
1. Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation
2. Numerical analysis for radiation‐resistant GaAs heteroface solar cell structures
3. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
4. Interstitial defect reactions in silicon
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