Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD-Reference-Cited by-同舟云学术

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Published:2018-12-18 Issue:10 Volume:216 Page:1800617
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gudovskikh Alexander S.¹^ORCID,Uvarov Alexander V.¹,Morozov Ivan A.¹^ORCID,Baranov Artem I.¹^ORCID,Kudryashov Dmitry A.¹^ORCID,Zelentsov Kirill S.¹^ORCID,Jaffré Alexandre²,Le Gall Sylvain²,Darga Arouna²,Brezard‐Oudot Aurore²,Kleider Jean‐Paul²

Affiliation:

1. St. Petersburg National Research Academic University RAS194021 St. PetersburgRussia

2. GeePs, Group of Electrical Engineering − Paris, CNRS, CentraleSupélec, Univ. Paris‐Sud, Université Paris‐Saclay Sorbonne UniversitésUPMC Univ Paris 0691192 Gif‐sur‐Yvette CedexFrance

Funder

Russian Scientific Foundation

CNRS

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800617

Reference34 articles.

1. The interface electronic states and valence band offsets of the Si/GaP heterojunction

2. Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory

3. Experimental study of the GaP-Si interface

4. Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers

5. Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission

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