Affiliation:
1. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)
2. Infineon Technologies Austria AG
Abstract
Platinum in silicon is conveniently used for lifetime engineering in power devices. Its deep energy level ensures an efficient recombination of charge carriers while it is sufficiently far away from mid bandgap to be a low generation center. Contemporary development aims at replacing diffusion from platinum silicide by implantation. To obtain a better understanding of the mechanisms involved, a series of experiments has been performed in this work and interpreted by numerical simulation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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2 articles.
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