Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon-Reference-Cited by-同舟云学术

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

Published:2013-10 Issue: Volume:205-206 Page:260-264
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Badr Elie¹,Pichler Peter²,Schmidt Gerhard³

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology

2. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

3. Infineon Technologies Austria AG

Abstract

Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.205-206.260.pdf

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