Metastable Defects in Proton Implanted and Annealed Silicon-Reference-Cited by-同舟云学术

Metastable Defects in Proton Implanted and Annealed Silicon

Published:2015-10 Issue: Volume:242 Page:169-174
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Jelinek Moriz¹,Laven Johannes G.²,Ganagona Naveen¹,Job Reinhart³,Schustereder Werner¹,Schulze Hans Joachim²,Rommel Mathias⁴^ORCID,Frey Lothar⁵

Affiliation:

1. Infineon Technologies Austria AG

2. Infineon Technologies AG

3. Muenster University of Applied Sciences

4. Fraunhofer Institute IISB

5. University of Erlangen-Nürnberg

Abstract

Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these defects upon periodical application of two different bias conditions during DLTS measurement are reviewed. Two specifically designed DLTS measurement sequences are proposed in order to further reveal the defects transformation rates and respective activation energies.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.169.pdf

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