Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP

Author:

Philipossian Ara1,Borucki Len1,Sampurno Yasa1,Zhuang Yun1

Affiliation:

1. Araca Incorporated

Abstract

In commercial CMP tools, slurry is applied near the pad center. As the pad rotates, more than 95% of the fresh slurry flows directly off the surface due to bow wave formation and inertial forces without ever entering the pad-wafer interface, resulting in low slurry utilization [1]. Furthermore, some slurry that manages to go under the wafer stays on the pad, mixes with fresh slurry and re-enters the pad-wafer interface. This used slurry contains reaction products, foam and pad debris (due to pad conditioning) that cause wafer-level defects [2]. Such defect-causing by-products keep recirculating on the pad during polishing and accumulate near the retaining ring over time. Also, since large amounts of DI water are used between wafer polishes to rinse off the debris and reaction products, appreciable amounts of water may stay on the pad and inside the grooves. When fresh slurry is introduced to polish the next wafer, it mixes with the residual water and is diluted, resulting in lower material removal. As such, the current slurry application method does not provide efficient slurry utilization and leaves significant room for improving defect levels. Moreover, the constant sweeping of the conditioner arm during in-situ conditioning results in uneven slurry distribution and introduces additional challenges when it comes to carrier multi-zone pressure control for reduced within-wafer removal rate non-uniformity.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Reference7 articles.

1. A. Meled, Y. Zhuang, Y. A. Sampurno, S. Theng, Y. Jiao, L. Borucki, and A. Philipossian, Japanese Journal of Applied Physics, 50, 05EC01 (2011).

2. H. Miyauchi, CMP Pad Surface Characterization for CMP Mechanism Investigation, 13th International Symposium on Chemical Mechanical Planarization, Lake Placid, NY (2008).

3. L. Borucki, A. Philipossian, Y. Sampurno, and S. Theng, U.S. Patent Application Publication No. 0112911 A1 (2010).

4. A Philipossian, L. Borucki, Y. Zhuang, and Y. Sampurno, in 2010 Materials Research Society Spring Meeting, San Francisco, CA, Apr 5-7, (2010).

5. L. Borucki, Y. Sampurno, A. Philipossian, R. McCoy, P. Lenkersdorfer, and R. Rhoades, in The fifteenth International Symposium on Chemical-mechanical Planarization, Lake Placid, NY, Aug 8-11, (2010).

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