Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs-Reference-Cited by-同舟云学术

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Published:2015-06 Issue: Volume:821-823 Page:842-846
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yonezawa Yoshiyuki¹,Mizushima Tomonori¹,Takenaka Kensuke¹,Fujisawa Hiroyuki¹,Deguchi T.¹,Kato Tomohisa¹,Harada Shinsuke¹,Tanaka Yasunori¹,Okamoto Dai¹,Sometani Mitsuru¹,Okamoto M.¹,Yoshikawa M.¹,Tsutsumi T.¹,Sakai Y.¹,Kumagai N.¹,Matsunaga S.¹,Takei M.¹,Arai Masayuki²,Hatakeyama T.¹,Takao K.³,Shinohe T.³,Izumi T.⁴,Hayashi T.⁴,Nakayama K.⁴,Asano K.⁴,Miyajima M.¹,Kimura H.¹,Otsuki A.⁵,Fukuda K.¹,Okumura H.¹,Kimoto T.⁶

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. New Japan Radio Co., Ltd.

3. Toshiba Corporation Corporate Research and Development Center

4. Kansai Electric Power Co., Inc.

5. Fuji Electric Co., Ltd.

6. Kyoto University

Abstract

Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.842.pdf

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