Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT
Author:
Affiliation:
1. College of Electrical Engineering and Automation, Jiangsu Normal University 1 , Xuzhou, Jiangsu 221000, China
2. State Key Laboratory of Advanced Power Transmission Technology, Beijing Institute of Smart Energy 2 , Beijing 100010, China
Abstract
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0144550/17781055/055132_1_5.0144550.pdf
Reference39 articles.
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4. Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
5. Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices;IEEE Trans. Electron Devices,2015
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