Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals-Reference-Cited by-同舟云学术

Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals

Published:2004-06 Issue: Volume:457-460 Page:893-896
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Blanqué Servane¹,Pérez R.²,Godignon Phillippe³,Mestres Narcis⁴,Morvan Erwan⁵,Kerlain Alexandre⁵,Dua Christian⁵,Brylinski Christian⁶,Zielinski Marcin⁷,Camassel Jean⁸

Affiliation:

1. Université Montpellier

2. Campus de Bellaterra

3. IMB-CNM, CSIC

4. Imperial College London

5. Domaine de Corbeville

6. Université de Lyon

7. Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications CNRS

8. Université Montpellier 2

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.893.pdf

Reference5 articles.

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3. M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarson, M. Maier, J. Appl. Phys. 92, (2002) p.549.

4. J. Camassel, J. Pernot, H. Y. Wang and H. Peyre, Phys. Stat. Sol. a, 195, pp.38-43 (2003).

5. J. Camassel, S. Blanque, N. Mestres, P. Godignon and J. Pascual, Phys. Stat. Sol. a, 195, pp.875-880 (2003).

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