Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference45 articles.
1. Native point defects and carbon clusters in 4H-SiC: A hybrid functional study;Kobayashi;J. Appl. Phys.,2019
2. The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface;Wei;Appl. Surf. Sci.,2022
3. Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices;Chen;J. Electron. Mater.,2010
4. Phosphorus implantation into 4H-SiC at room and elevated temperature;Muting;Semicond. Sci. Technol.,2021
5. Structural and Functional Characterizations of Al+Implanted 4H-SiC Layers and Al+Implanted 4H-SiCp-nJunctions after 1950°C Post Implantation Annealing;Nipoti;ECS J. Solid State Sci. Technol.,2016
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1. The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing;Applied Surface Science;2024-10
2. Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC;Journal of Applied Physics;2024-05-08
3. Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers;Materials Science in Semiconductor Processing;2024-05
4. Analysis of the magnetic and optical properties of (Fe, V)-co-doped 3C–SiC using first-principles calculations;Journal of Physics and Chemistry of Solids;2023-10
5. Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3;APL Materials;2023-06-01
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