Structural and Functional Characterizations of Al+Implanted 4H-SiC Layers and Al+Implanted 4H-SiCp-nJunctions after 1950°C Post Implantation Annealing
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
2. Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication
3. High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
4. Ion-implantation in bulk semi-insulating 4H–SiC
5. Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC
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1. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
2. Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC;Applied Surface Science;2023-03
3. Temperature-Dependence of Aluminum Implanted 4H-SiC After High-Temperature Annealing;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06
4. OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup;IEEE Transactions on Electron Devices;2021-07
5. Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions;Japanese Journal of Applied Physics;2021-02-26
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