Material and n-p junction properties of N-, P-, and N/P-implanted SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367329
Reference12 articles.
1. Silicon carbide MOSFET technology
2. 4H-SiC MESFET's with 42 GHz f/sub max/
3. Nitrogen-implanted SiC diodes using high-temperature implantation
4. The effects of N+ dose in implantation into 6h-sic epilayers
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