Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3098226
Reference60 articles.
1. G. L. Harris, Properties of Silicon Carbide, edited by G. L. Harris (Short Run Press, Exceter, 1995), p. vii.
2. Silicon Carbide
3. Maturing ion-implantation technology and its device applications in SiC
4. Technological Aspects of Ion Implantation in SiC Device Processes
5. Nitrogen Ion Implantation into α-SiC Epitaxial Layers
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1. Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers;Physics Procedia;2014
2. Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal;Applied Surface Science;2013-02
3. XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal;Materials Science Forum;2012-05
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